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Everspin’s MRAM technology revolutionizes non-volatile memory
by storing data using magnetic polarization rather than electric
charge.
With infinite read and write endurance, MRAM retains data for decades without the need for a battery.
AVAILABLE INTERFACES
Parallel MRAMs (8 & 16-bit) are controlled with standard SRAM asynchronous timing interfaces. Serial MRAMs have the same SPI interface as Flash
and EEPROM
but with fast 40 MHz clock speed and no write delays.
DENSITIES
Standard asynchronous, parallel MRAM is available from 256Kb to 16Mb. Serial MRAMs are available in sizes from 256Kb to 1Mb.
PACKAGES
Everspin products
are available in TSOPII and small footprint, low profile BGA and DFN packages
to save board space in compact designs. All Everspin packages are lead free and RoHS compliant.
TEMPERATURE RANGE
MRAM
currently offers products that operate in three temperature ranges • Extended Temperature: -40 °C to 105 °C
• Industrial Temperature: -40 °C to 85 °C
• Commercial Temperature: 0 °C to 70 °C
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SRAM read/write cycle time
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Unlimited read/write endurance
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Non-volatile for greater than 20-years
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Commercial, industrial, extended temperatures
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Small footprint—up to 16 Mb in one chip
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Fast, simple interfaces—Parallel SRAM or Serial SPI
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Simple one transistor, one magnetic tunnel junction
(1T-1MTJ) bit cell
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Best-in-class soft error rate
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RoHS compliant—no battery, no lead (Pb)
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Replaces multiple memories — Combines functions of Flash, SRAM,
EEPROM, nvRAM, BBSRAM
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MIT Technology Review selected MRAM “Toggle” as one of the key discoveries of 2003
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Recognized as one of the 5 Killer Patents in the May 2004 “Invention
Issue”
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Named Product of the Year by Electronic Products
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Won In-Stat’s Innovation Award
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Won R&D Magazine — Top 100 Inventions of 2007
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Won Design News Golden Mousetrap Award |
